t4 - lds -0 283 , rev . 1 (1 2 1659 ) ?201 2 microsemi corporation page 1 of 5 2n6317 and 2n6318 available pnp silicon power transistor description th ese 2n6317 and 2n6318 device s are an excellent choice for un - tuned amplifier applications . it is also ideal for general purpose power switch and amplifier applications. microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. to -2 13 aa (to - 66 ) package important: for the latest information, visit our website http://www.microsemi.com . features ? hermetically sealed. ? complimentary pairing with the npn 2n6315 and 2n6316. ? rohs compliant versions available. applications / benefits ? convenient package. ? mechanically rugged. ? comm ercial, i ndustrial, and m ilitary u ses . maximum ratings @ 25 oc unless otherwise stated msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temperature t j and t stg -6 5 to + 200 o c thermal resistance junction - to - lead (1) r ? jl 235 o c collector - base voltage 2n6317 2n6318 v cbo 60 80 v emitter - base voltage v ebo 5 v collector - emitter voltage 2n6317 2n6318 v ceo 60 80 v continuous operating collector current i c 7 a continuous base current 2 a total power dissipation (2 ) p t 90 w notes: 1. at 1/8 inch from case for 10 seconds. 2. derate linearly at 0.515 w/ oc. downloaded from: http:///
t4 - lds -0 283 , rev . 1 (1 2 1659 ) ?201 2 microsemi corporation page 2 of 5 2n6317 and 2n6318 mechanical and packaging ? case: hermetic, to - 66 package. nickel plate with n ickel cap. ? terminals: solder dipped (sn63/pb37) over nickel plated a lloy 52. rohs compliant m atte -t in plating is also available. ? marking: msc , part number , date code , p olarity s ymbol. ? weight: approximately 5 .7 grams. ? see package dimensions on last pa ge. part nomenclature 2n6317 (e3) jedec type n umber see e lectrical characteristics t able rohs compliance e3 = rohs c ompliant blank = non - rohs c ompliant symbols & definitions symbol definition i b base current t c case temperature v cb collector - base voltage v cc collector - supply voltage v eb emitter - base voltage downloaded from: http:///
t4 - lds -0 283 , rev . 1 (1 2 1659 ) ?201 2 microsemi corporation page 3 of 5 2n6317 and 2n6318 electrical characteristics @ 25 oc unless otherwise stated parameters / test conditions symbol min. max. unit static character is tics collector cutoff current v ce = 6 0 v be = 1.5 v , t c = 150 oc v ce = 8 0 v be = 1.5 v , t c = 150 oc 2n6317 2n6318 i cex 2.0 ma collector cutoff current v ce = 6 0 v be = 1.5 v v ce = 8 0 v be = 1.5 v 2n6317 2n6318 i cex 0.25 ma emitter cutoff current v eb = 5 v i ebo 1.0 ma collector - emitter open base sustain voltage (1) i b = 0 , i c = 10 0 ma 2n6317 2n6318 v ceo(sus) 60 80 collector cutoff current, base open i b = 0, v ce = 30 v i b = 0, v ce = 40 v 2n6317 2n6318 i ceo 0.5 ma dc fo rward current transfer ratio (1) i c = 7 a, v ce = 4 v i c = 2.5 a, v ce = 4 v i c = 0.5 a, v ce = 4 v h fe 4 25 35 125 collector - emitter saturation voltage (1) i c = 7.0 a, i b = 1.75 a i c = 4.0 a, i b = 0.4 a v ce(sat) 2.0 1.0 v base - emitter saturation voltage (1) i c = 7.0 a, i b = 1.75 a v be(sat) 2.5 v base - emitter voltage (1) i c = 2.5 a, v ce = 4.0 v v be 1.5 v note: 1. pulse width < 300 s; duty cycle < 2 % . dynamic characteristics parameters / test conditions symbol min. max. unit magnitude of common emitter small - signal short - circuit forward current transfer ratio v ce = 10 v, i c = 0.25 a, f = 1 mhz |h fe | 4 common base output v cb = 10 v, i e = 0 a, f = 1 mh z c ob 300 pf common emitter small - signal short - circuit forward current trans -r atio v ce = 4 v, i c = 0 .5 a, f = 1 khz h fe 20 switching characteristics parameters / test conditions symbol min. max. unit ri se time v cc = 30 v, i c = 25 a, i b1 = i b2 = 0.25 a (see figure 2 ) t r 0.7 s storage time v cc = 30 v, i c = 25 a, i b1 = i b2 = 0.25 a (see figure 2 ) t s 1.0 s fall time v cc = 30 v, i c = 25 a, i b1 = i b2 = 0.25 a (see figure 2 ) t f 0.8 s downloaded from: http:///
t4 - lds -0 283 , rev . 1 (1 2 1659 ) ?201 2 microsemi corporation page 4 of 5 2n6317 and 2n6318 graphs v ce , collector - emitter voltage (volts ) figure 1 safe operating area ( t c = 25 oc ) figure 2 switching times test circuit i c , collector current (amps) downloaded from: http:///
t4 - lds -0 283 , rev . 1 (1 2 1659 ) ?201 2 microsemi corporation page 5 of 5 2n6317 and 2n6318 package dimensions dim inch millimeters min max min max a1 .470 .500 11.94 12.70 a2 - .620 - 15.75 b .050 .075 1.27 1.91 c - .050 - 1.27 d .360 - 9.14 - e .028 .034 0.71 0.86 f .145 radius 3.68 radius g .958 .962 24.33 24.43 h .570 .590 14.48 14.99 j .093 .107 2.36 2.72 k .190 .210 4.83 5.33 l .350 radius 8.89 radius m .142 .152 3.61 3.86 n .250 .340 6.35 8.64 t1 base t2 emitter case colle ctor downloaded from: http:///
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